PTF 10112
Electrical Characteristics
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 100 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 150 mA
V
DS
= 10 V, I
D
= 2 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
4.0
Max
—
5.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
237
1.35
–40 to +150
0.74
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
13
70
Gain (dB)
60
50
Output Power & Efficiency
14
80
13
Gain (dB)
12
60
50
40
Gain (dB)
Gain (dB)
12
11
10
11
I
DQ
= 580mA
P
OUT
= 20 W
-10
20
-20
10
Return Loss (dB)
V
CC
= 28 V
I
DQ
= 580 mA
Efficiency (%)
1950
10
40
30
2050
9
1750
1850
9
1930
1940
1950
1960
1970
1980
-30
0
1990
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB)
V
DD
= 28 V
Efficiency (%)
@P-1dB
0
30
Efficiency (%)
Broadband Test Fixture Performance
ERICSSON [ ERICSSON ]
