FDC606P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
2500
I
D
= -6A
V
DS
= -4V
-6V
2000
CAPACITANCE (pF)
-8V
C
ISS
f = 1 MHz
V
GS
= 0 V
4
3
1500
C
OSS
1000
C
RSS
500
2
1
0
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
0
0
3
6
9
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
DC
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 156
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100µs
10
Figure 8. Capacitance Characteristics.
8
SINGLE PULSE
R
θJA
= 156°C/W
T
A
= 25°C
6
1
4
0.1
2
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 156 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC606P Rev E (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
