FDS4465
Typical Characteristics
50
V
GS
= -4.5V
-2.0V
-I
D
, DRAIN CURRENT (A)
40
-2.5V
-1.8V
30
-1.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3
2.6
2.2
V
GS
= -1.5V
1.8
-1.8V
1.4
1
0.6
-2.0V
-2.5V
-4.5V
20
10
0
0
0.5
1
1.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -13.5A
V
GS
= -10V
1.4
I
D
= -6.3A
0.02
1.2
0.015
T
A
= 125
o
C
0.01
T
A
= 25
o
C
0.005
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
50
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5.0V
-I
D
, DRAIN CURRENT (A)
40
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
T
A
= 125
o
C
25
o
C
-55
o
C
30
20
T
A
= 125
o
C
10
-55
o
C
0
0
0.5
1
1.5
2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465 Rev C1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
