Typical Electrical Characteristics
50
- I
D
, DRAIN-SOURCE CURRENT (A)
2.5
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
40
V
GS
= -10V
-6.0V
-4.5V
-3.5V
2
V
GS
= -3.5V
-4.0V
30
1.5
-4.5 V
-5.5V
-7.0V
20
-3.0V
1
-10V
10
0
0
0.6
1.2
1.8
2.4
3
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
10
20
30
40
50
- I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.05
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
DRAIN-SOURCE ON-RESISTANCE
1.4
I
D
= -11A
V
GS
= -10V
I
D
= -5.5A
0.04
R
DS(ON)
, NORMALIZED
1.2
0.03
1
0.02
T = 125° C
J
0.8
0.01
25° C
0.6
-50
-25
0
25
50
75
100
125
150
0
0
2
4
6
8
10
- V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
V
DS
= -5.0V
- I
D
, DRAIN CURRENT (A)
40
TJ = -55° C
- I
S
, REVERSE DRAIN CURRENT (A)
50
50
25° C
125° C
V
GS
= 0V
10
TJ = 125° C
1
30
25° C
0.1
20
-55° C
10
0.01
0
1
2
3
4
5
- V
GS
, GATE TO SOURCE VOLTAGE (V)
0.001
0
0.4
0.8
1.2
- V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6675 Rev.C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
