FDS6900AS
Typical Characteristics: Q2
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=8.2A
800
f = 1MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
= 10V
20V
600
C
iss
400
8
6
15V
4
C
oss
200
2
C
rss
0
0
3
6
Q
g
, GATE CHARGE (nC)
9
12
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
1
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
o
Figure 8. Capacitance Characteristics.
50
100
µ
s
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
30
10s
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6900AS Rev
B
(X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
