HRF3205, HRF3205S
T
C
= 25
o
C, Unless Othewise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Absolute Maximum Ratings
55
55
±20V
100
390
Figure 10
175
1.17
-55 to 175
300
260
V
V
V
A
A
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±20V
MIN
55
2
-
-
-
-
-
-
-
-
-
V
DD
= 44V, I
D
≅
59A,
V
GS
= 10V, I
g(REF)
= 3mA
(Figure 6)
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 5)
-
-
-
-
-
-
Measured From the Contact
Modified MOSFET
Screw on Tab to Center of Die Symbol Showing the
Internal Devices In-
Measured From the Drain
ductances
Lead, 6mm (0.25in) From
D
Package to Center of Die
Measured From the Source
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
L
D
G
L
S
S
TYP
-
-
-
-
-
0.057
0.0065
14
100
43
70
-
-
-
4000
1300
480
7.5
MAX
-
4
25
250
100
-
0.008
-
-
-
-
170
32
74
-
-
-
-
UNITS
V
V
µA
µA
nA
V
Ω
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Breakdown Voltage Temperature
Coefficient
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
I
GSS
∆V
(BR)DSS
/ Reference to 25
o
C, I
D
= 250µA
∆T
J
r
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
S
I
D
= 59A, V
GS
= 10V (Figure 4)
V
DD
= 28V, I
D
≅
59A,
R
L
= 0.47Ω, V
GS
=
10V,
R
GS
= 2.5Ω
-
Internal Drain Inductance
L
D
-
4.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220
TO-263 (PCB Mount, Steady State)
-
-
-
-
-
-
0.85
62
40
o
C/W
o
C/W
o
C/W
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
