HRF3205, HRF3205S
Typical Performance Curves
8000
V
GS
, GATE TO SOURCE VOLTAGE (V)
7000
C, CAPACITANCE (pF)
6000
5000
C
ISS
4000
3000
C
OSS
2000
1000
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
(Continued)
20
I
D
= 59A
V
DS
= 28V
16
V
DS
= 11V
12
V
DS
= 44V
8
4
0
0
36
72
108
144
180
Q
g
, GATE CHARGE (nC)
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
1000
I
SD
, REVERSE DRAIN CURRENT(A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
1000
100
I
D
, DRAIN CURRENT (A)
10µs
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100µs
1ms
10ms
10
T
J
= 25
o
C
10
1
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1
1
V
DSS(MAX)
= 55V
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
120
1000
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
90
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
60
100
STARTING T
J
= 25
o
C
30
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
175
STARTING T
J
= 150
o
C
T
C
, CASE TEMPERATURE (
o
C)
10
0.01
1
10
0.1
t
AV
, TIME IN AVALANCHE (ms)
100
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
