KSC5026M — NPN Silicon Transistor
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
T
A
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Test Condition
I
C
= 1mA, I
E
= 0
I
E
= 1mA, I
C
= 0
I
C
= 0.75A,
I
B1
= -I
B2
= 0.15A,
L = 5mH, Clamped
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.75A, I
B
= 0.15A
I
C
= 0.75A, I
B
= 0.15A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
= 400V
I
C
= 5I
B1
= -2.5I
B2
= 1A
R
L
= 400Ω
Min.
1100
800
7
800
Typ.
Max.
Units
V
V
V
V
Collector-Emitter Breakdown Voltage I
C
= 5mA, I
B
= 0
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
10
10
10
8
40
2
1.5
35
15
0.5
3
0.3
μA
μA
V
V
pF
MHz
μs
μs
μs
h
FE
Classification
Classification
h
FE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
© 2011 Fairchild Semiconductor Corporation
KSC5026M Rev. B3
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
