KSC5026M — NPN Silicon Transistor
Typical Performance Characteristics
2.0
1.8
1000
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
h
FE
, DC CURRENT GAIN
10
100
I
B
= 120mA
I
B
= 100mA
I
B
= 80mA
I
B
= 60mA
I
B
= 40mA
I
B
= 20mA
I
B
= 10mA
I
B
= 5mA
I
B
= 0
8
9
10
1
0.01
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1.6
I
C
= 5 I
B
1.4
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
1
V
BE
(sat)
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
Figure 4. Base-Emitter On Voltage
I
C
(max).(Pulse)
s
1m
s
0
μ
10
I
C
[A], COLLECTOR CURRENT
t
ON
, t
STG
, t
F
[
μ
s], TIME
t
STG
1
1
I
C
(max)
DC
ms
10
t
ON
t
F
0.1
0.1
0.01
0.01
0.1
1
10
1E-3
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2011 Fairchild Semiconductor Corporation
KSC5026M Rev. B3
3
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
