Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
T
J
=55°C
Gate - Body Leakage Current
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -1.2 A
T
J
=125°C
V
GS
= -4.5 V, I
D
= -1.3 A
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -1.2 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
-2
-3
-0.5
-0.3
-0.78
-0.58
0.22
0.34
0.16
-20
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
-1
-0.8
0.27
0.49
0.2
A
S
V
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
360
170
60
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -10 V, I
D
= -1.2 A,
V
GS
= -4.5 V
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
8
29
33
23
5.7
0.7
1.8
15
50
60
45
8.5
ns
ns
ns
ns
nC
nC
nC
NDS336P Rev. E
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
