Typical Electrical Characteristics: N-Channel
(continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
I
D
= 250µA
10
5
I
S
, REVERSE DRAIN CURRENT (A)
2
1
0.5
V
GS
= 0 V
BV
DSS
, NORMALIZED
1.1
1.05
TJ = 125°C
25°C
1
0.2
0.1
0.05
0.02
0.01
0.2
0.4
0.6
0.8
-55°C
0.95
0.9
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
2000
10
I
D
= 3.5A
V
GS
, GATE-SOURCE VOLTAGE (V)
1000
CAPACITANCE (pF)
8
V
DS
= 10V
500
C iss
6
300
200
4
f = 1 MHz
V
GS
= 0V
C oss
C rss
1
2
5
10
20
30
2
100
0.1
0.2
0.5
0
0
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8
Q
g
, GATE CHARGE (nC)
12
16
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
12
, TRANSCONDUCTANCE (SIEMENS)
10
V
DS
=10V
T J = -55°C
8
25°C
6
125°C
4
2
g
0
0
FS
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9958.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
