Typical Electrical Characteristics
:
P-Channel
-20
3.5
V
I
D
, DRAIN-SOURCE CURRENT (A)
-15
GS
= -10V
-8.0
DRAIN-SOURCE ON-RESISTANCE
-7.0
, NORMALIZED
V
GS
= -4.0V -4.5
3
-5.0
-5.5
-6.0
-5.5
2.5
-6.0
2
-10
DS(on)
-5.0
-4.5
1.5
1
-7.0
-8.0
-10
-5
-4.0
0
R
-5
0
-1
-2
-3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-4
0.5
0
-4
-8
-12
I
D
, DRAIN CURRENT (A)
-16
-20
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with Gate
Voltage and Drain Current.
DRAIN-SOURCE ON-RESISTANCE (OHMS)
1.5
DRAIN-SOURCE ON-RESISTANCE
2
1.4
1.3
I
D
= -3.5A
V
GS
= -10V
, NORMALIZED
R
DS(ON)
, NORMALIZED
V
GS
= -10V
T J = 125°C
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
1.5
DS(on)
25°C
1
-55°C
R
0.5
0
-5
-10
I
D
, DRAIN CURRENT (A)
-15
-20
Figure 14. On-Resistance Variation
with Temperature.
Figure 15. On-Resistance Variation with Drain
Current and Temperature.
-10
1.1
V
DS
= -10V
-8
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25°C
125°C
GATE-SOURCE THRESHOLD VOLTAGE (V)
1.05
V
DS
= V
GS
I
D
= -250µA
V
th
, NORMALIZED
1
-6
0.95
-4
0.9
-2
0.85
0
-1
-2
V
GS
-3
-4
-5
, GATE TO SOURCE VOLTAGE (V)
-6
0.8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 16. Drain Current Variation with
Gate Voltage and Temperature
.
Figure 17. Gate Threshold Variation with
Temperature.
NDS9958.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
