September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
Features
2.7A, 60V. R
DS(ON)
= 0.2
Ω
@ V
GS
= 10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
_________________________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25°C unless otherwise noted
NDT014
60
±20
(Note 1a)
Units
V
V
A
±2.7
±10
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT014 Rev. C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
