Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
60
V
Zero Gate Voltage Drain Current
25
250
100
-100
µA
µA
nA
nA
VDS = 48 V, VGS = 0 V, TJ=125°C
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
IGSSF
IGSSR
VGS = -20 V, VDS= 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
2
3
4
V
VGS(th)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.6 A
Static Drain-Source On-Resistance
0.18
0.2
RDS(ON)
W
Forward Transconductance
2
S
gFS
VDS = 25 V, ID = 1.6 A
DYNAMIC CHARACTERISTICS
Input Capacitance
155
60
pF
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
pF
pF
Reverse Transfer Capacitance
15
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD =30 V, ID = 10 A,
10
64
10
10
5
20
100
20
ns
VGEN = 10 V, RGEN = 24 W
ns
ns
20
ns
Qg
Qgs
Qgd
VDS = 48 V,
ID = 10 A, VGS = 10 V
11
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
1.2
2
3.1
5.8
NDT014 Rev. C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
