SGW6N60UF
400
350
300
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25℃
T
C
= 125℃
Ton
Capacitance [pF]
Cies
250
200
150
100
50
0
1
10
30
Switching Time [ns]
Tr
Coes
Cres
10
1
10
100
400
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25℃
T
C
= 125℃
Toff
Toff
300
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25℃
T
C
= 125℃
100
Switching Loss [uJ]
Eon
Eoff
Eoff
Tf
100
10
Tf
50
1
10
100
400
5
1
10
100
400
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
Ω
T
C
= 25℃
T
C
= 125℃
500
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
Ω
T
C
= 25℃
T
C
= 125℃
Switching Time [ns]
Switching Time [ns]
100
Toff
Ton
100
Tr
Tf
10
1
2
3
4
5
6
50
1
2
3
4
5
6
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW6N60UF Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
