SGW6N60UF
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
Ω
T
C
= 25℃
T
C
= 125℃
15
Common Emitter
R
L
= 100
Ω
Tc = 25℃
Gate - Emitter Voltage, V [ V ]
GE
100
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
Eon
Eon
Eoff
10
Eoff
5
1
2
3
4
5
6
0
0
3
6
9
12
15
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
50
Ic MAX. (Pulsed)
10
50
50us
Ic MAX. (Continuous)
1㎳
100us
Collector Current, I
C
[A]
1
DC Operation
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
Collector Current, I
C
[A]
10
1
0.1
Safe Operating Area
V
GE
=20V, T
C
=100 C
0.1
1
10
100
1000
o
0.01
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [
℃
/W]
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Pdm
single pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGW6N60UF Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
