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10XSD200 参数 Datasheet PDF下载

10XSD200图片预览
型号: 10XSD200
PDF下载: 下载PDF文件 查看货源
内容描述: 双10毫欧的高边开关 [Dual 10 mOhm High Side Switch]
分类和应用: 开关
文件页数/大小: 60 页 / 1136 K
品牌: FREESCALE [ Freescale ]
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ELECTRICAL CHARACTERISTICS  
STATIC ELECTRICAL CHARACTERISTICS  
Table 3. Static Electrical Characteristics (continued)  
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, -40 C TA 125 C, GND = 0 V. Typical values are  
average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.  
parameter  
Symbol  
Min  
Typ  
Max  
Unit  
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)  
E
Output Current Sensing Error (% (level) after offset  
ESR1_ERR(Comp)  
%
SR1  
compensation(19) at output current level (Sense ratio CSR1 selected):  
TJ=-40 C  
-10  
-11  
-18  
-29  
10  
11  
18  
29  
1.5 A  
0.5 A  
0.25 A  
0.15 A  
TJ=125C  
1.5 A  
0.5 A  
-8.0  
-10  
-12  
-16  
8.0  
10  
12  
16  
0.25 A  
0.15 A  
TJ=25 to 125C  
1.5 A  
-8.0  
-10  
-13  
-21  
8.0  
10  
13  
21  
0.5 A  
0.25 A  
0.15 A  
E
Output Current Sensing Error in parallel mode (%,  
ESR0_ERR_PAR  
SR0  
uncompensated(20)) at outputs Current level (Sense ratio CSR0 selected):  
%
TJ=-40 C  
-10  
-11  
10  
11  
6.0 A (per channel)  
3.0 A (per channel)  
TJ=125C  
6.0 A (per channel)  
3.0 A (per channel)  
TJ=25 to 125C  
-8.0  
-8.0  
8.0  
8.0  
6.0 A (per channel)  
3.0 A (per channel)  
-8.0  
-8.0  
8.0  
8.0  
Notes:  
19. See note (20), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).  
Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.  
20. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see  
section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS  
10XSD200  
Analog Integrated Circuit Device Data  
12  
Freescale Semiconductor