ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V
V
PWR
36 V, 3.0 V
V
DD
5.5 V, - 40
C
T
A
125
C,
GND = 0 V. Typical values are
average values evaluated under nominal conditions T
A
= 25 °C, V
PWR
= 28 V & V
DD
= 5.0 V, unless specified otherwise.
parameter
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1)
ON-Resistance, Drain-to-Source
(
I
HS
= 3.0 A, T
J
= 25 °C)
CSNS_ratio = 0
V
PWR
= 8.0 V
V
PWR
= 28 V
V
PWR
= 36 V
ON-Resistance, Drain-to-Source (I
HS
= 3.0 A,T
J
= 150 °C)
CSNS_ratio = 0
V
PWR =
8.0 V
V
PWR
= 28 V
V
PWR
= 36 V
ON-Resistance, Drain-to-Source difference from one channel to the other
in parallel mode (I
HS
= 1.0 A,T
J
= 150 °C) CSNS_ratio = X
ON-Resistance, Source-Drain (I
HS
= -3.0 A, T
J
= 150
°C,
V
PWR
= -24 V)
Max. detectable wiring length (2.5 mm²) for severe short-circuit detection
High slew rate selected
Medium slew rate selected:
Low slew rate selected:
Overcurrent Detection thresholds with CSNS_ratio bit = 0 (CSR0)
OCH1_0
OCH2_0
OCM1_0
OCM2_0
OCL1_0
OCL2_0
OCL3_0
Overcurrent Detection thresholds with CSNS_ratio bit = 1(CSR1)
OCH1_1
OCH2_1
OCM1_1
OCM2_1
OCL1_1
OCL2_1
OCL3_1
Output pin leakage Current in sleep state (positive value = outgoing)
V
HS,OFF
= 0 V (V
HS,OFF
= output voltage in OFF state)
V
HS,OFF
= V
PWR
, device in sleep state (V
PWR
= 24 V)
Switch Turn-on threshold for Supply overvoltage (V
PWR
-GND)
Switch turn-on threshold for Drain-Source overvoltage (measured at
I
OUT
= 500 mA
V
D_GND(CLAMP)
V
DS(CLAMP)
I
OUT_LEAK
–
-40.0
58
58
–
–
–
–
+11
+5.0
66
66
V
V
20
50
100
55
35
22
13
9.0
6.0
3.0
18.3
11.7
7.2
4.4
3.0
2.0
0.96
85
160
280
66
42
26
16
10.8
7.2
3.6
22
14.0
8.7
5.3
3.6
2.4
1.2
140
300
600
77
49
31
19.5
12.6
8.4
4.2
26.5
16.3
10.1
6.2
4.2
2.8
1.44
µA
A
A
R
DS(ON)150
-0.8
R
SD(ON)150
L
SHORT
–
–
–
+0.8
18
m
m
cm
R
DS(ON)150
–
–
–
–
–
–
18
18
18
R
DS(ON)25
–
–
–
–
–
–
10
10
10
m
m
10XSD200
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
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