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908E622_12 参数 Datasheet PDF下载

908E622_12图片预览
型号: 908E622_12
PDF下载: 下载PDF文件 查看货源
内容描述: 综合四半桥,三高边AMD EC玻璃驱动器,带有嵌入式微控制器和LIN高端镜 [Integrated Quad Half-bridge, Triple High Side amd EC Glass Driver with Embedded MCU and LIN for High End Mirror]
分类和应用: 驱动器微控制器
文件页数/大小: 63 页 / 1223 K
品牌: FREESCALE [ Freescale ]
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ELECTRICAL CHARACTERISTICS  
STATIC ELECTRICAL CHARACTERISTICS  
Table 3. Static Electrical Characteristics (continued)  
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller  
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values  
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
HIGH SIDE OUTPUTS HS2 AND HS3(18)  
Switch On Resistance  
mΩ  
TJ = 25 °C, ILOAD = 1.0 A  
R
440  
500  
DS(ON)-HS23  
Over-current Shutdown  
I
3.6  
5.6  
A
HSOC23  
Over-current Shutdown blanking time(16)  
Current to Voltage Ratio(17)  
t
4.8  
µs  
OCB  
CR  
1.16  
1.66  
2.16  
V/A  
RATIOHS23  
V
[V] / I [A], (measured and trimmed IHS = 2.0 A)  
HS  
ADOUT  
High Side Switching Frequency(16)  
f
25  
kHz  
V
PWMHS  
High Side Freewheeling Diode Forward Voltage  
V
0.9  
HSF  
TJ = 25 °C, ILOAD = 1.0 A  
Leakage Current  
I
<0.2  
10  
µA  
LeakHS  
HALF-BRIDGE OUTPUTS HB1 AND HB2  
Switch On Resistance  
R
mΩ  
DS(ON)-HB12  
High Side, TJ = 25 °C, ILOAD = 1.0 A  
Low Side, TJ = 25 °C, ILOAD = 1.0 A  
750  
750  
900  
900  
Over-current Shutdown  
High Side  
I
A
HBOC12  
1.0  
1.0  
1.5  
1.5  
Low Side  
Over-current Shutdown blanking time(16)  
Switching Frequency (16)  
t
4.8  
μs  
kHz  
V
OCB  
f
25  
PWM  
Freewheeling Diode Forward Voltage  
High Side, TJ = 25 °C, ILOAD = 1.0 A  
Low Side, TJ = 25 °C, ILOAD = 1.0 A  
V
0.9  
0.9  
HSF  
V
LSF  
Leakage Current  
I
<0.2  
10  
µA  
LeakHB  
Low Side Current to Voltage Ratio(17)  
CR  
V/A  
RATIOHB12  
V
V
[V] / I [A], CSA = 1, (measured and trimmed IHS = 200 mA)  
HB  
17.5  
3.5  
25.0  
5.0  
32.5  
6.5  
ADOUT  
ADOUT  
[V] / I [A], CSA = 0, (measured and trimmed IHS = 500 mA)  
HB  
Notes  
16. This parameter is guaranteed by process monitoring but is not production tested.  
17. This parameter is guaranteed only if correct trimming was applied.  
18. The high side HS3 can be only used for resistive loads.  
908E622  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
11