ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
OUTPUT HVDD
Symbol
Min
Typ
Max
Unit
SWITCHABLE V
DD
Over-current Shutdown
I
25
35
50
mA
µs
HVDDOC
Over-current Shutdown Blanking Time(21)
HVDDT1:0 = 00
t
HVDDOCB
–
–
–
–
950
536
234
78
–
–
–
–
HVDDT1:0 = 01
HVDDT1:0 = 10
HVDDT1:0 = 11
Over-current Flag Delay(21)
t
–
–
0.5
–
ms
HVDDOCFD
Dropout Voltage @ ILOAD = 20 mA
VSUP DOWN SCALER(22)
V
110
300
mV
HVDDDROP
Voltage Ratio (RATIO VSUP = VSUP / VADOUT
)
RATIOVSUP
4.75
5.0
5.25
–
INTERNAL DIE TEMPERATURE SENSOR(22)
Voltage / Temperature Slope(21)
Output Voltage @ 25 °C
STtoV
VT25
–
26
–
mV/°C
V
1.7
1.9
2.1
HALL-EFFECT SENSOR INPUT H0 - GENERAL PURPOSE INPUT MODE (H0MS = 0)
Input Voltage Low Threshold
Input Voltage High Threshold
Input Voltage Hysteresis
Pullup resistor
V
–
–
–
1.5
–
V
V
LT
HT
HH
V
3.5
100
7.0
V
–
500
13
mV
kΩ
R
10
PH
HALL-EFFECT SENSOR INPUT H0 - 2PIN HALL SENSOR INPUT MODE (H0MS = 1)
Output Voltage
V
VSUP < 17 V
VSUP >17 V
V
V
–
–
VSUP-1.2
–
–
HALL1
HALL2
15.8
Output Drop @ IOUT = 15 mA
Sense Current Threshold
Sense Current Hysteresis
Sense Current Limitation
Notes
V
–
–
7.9
2.5
10
V
H0D
6.0
650
20
mA
µA
mA
IHSCT
IHSCH
1100
40
1650
70
V
HSCLIM
21. This parameter is guaranteed by process monitoring but is not production tested.
22. This parameter is guaranteed only if correct trimming was applied
908E622
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
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