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908E622_12 参数 Datasheet PDF下载

908E622_12图片预览
型号: 908E622_12
PDF下载: 下载PDF文件 查看货源
内容描述: 综合四半桥,三高边AMD EC玻璃驱动器,带有嵌入式微控制器和LIN高端镜 [Integrated Quad Half-bridge, Triple High Side amd EC Glass Driver with Embedded MCU and LIN for High End Mirror]
分类和应用: 驱动器微控制器
文件页数/大小: 63 页 / 1223 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding limits on any pin may cause permanent damage to
the device.
Rating
ELECTRICAL RATINGS
Supply Voltage
Analog Chip Supply Voltage under Normal Operation (Steady-state)
Analog Chip Supply Voltage under Transient Conditions
MCU Chip Supply Voltage
Input Pin Voltage
Analog Chip
Microcontroller Chip
Maximum Microcontroller Current per Pin
All Pins except VDD, VSS, PTA0:PTA4
PTA0:PTA4
Maximum Microcontroller VSS Output Current
Maximum Microcontroller VDD Input Current
LIN Supply Voltage
Normal Operation (Steady-state)
Transient Input Voltage (per ISO7637 Specification) and with
External Components
ESD Voltage
Human Body Model
Machine Model
Charge Device Model
Symbol
Value
Unit
V
V
SUP(SS)
V
SUP(PK)
V
DD
- 0.3 to 28
- 0.3 to 40
- 0.3 to 5.5
V
V
IN (ANALOG)
V
IN (MCU)
I
PIN(1)
I
PIN(2)
I
MVSS
I
MVDD
- 0.3 to 5.5
V
SS
- 0.3 to V
DD
+0.3
mA
±15
± 25
100
100
mA
mA
V
V
BUS(SS)
V
BUS(PK)
-18 to 40
-150 to 100
V
H0 pin
V
ESD1-1
V
ESD1-2
V
ESD2
V
ESD3
±1000
±2000
±200
± 750
Human Body Model
all other pins
Notes
1. Transient capability for pulses with a time of t < 0.5 sec.
2. ESD testing is performed in accordance with the Human Body Model (HBM) (C
ZAP
= 100 pF, R
ZAP
= 1500
Ω),
the Machine Model (MM)
(C
ZAP
= 200 pF, R
ZAP
= 0
Ω),
and the Charge Device Model (CDM), Robotic (C
ZAP
= 4.0 pF).
908E622
6
Analog Integrated Circuit Device Data
Freescale Semiconductor