Freescale Semiconductor
Technical Data
Document Number: MRF6V4300N
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
•
Typical CW Performance: V
DD
= 50 Volts, I
DQ
= 900 mA, P
out
= 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V4300NR1
MRF6V4300NBR1
10-
-600 MHz, 300 W, 50 V
LATERAL N-
-CHANNEL
SINGLE-
-ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6V4300NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE-
-ENDED
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Figure 1. Pin Connections
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6V4300NR1 MRF6V4300NBR1
1
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
