Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Symbol
R
θJC
Value
(1,2)
0.24
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 150 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Power Gain
Drain Efficiency
Input Return Loss
C
rss
C
oss
C
iss
—
—
—
2.8
105
304
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.9
—
1.65
2.7
0.25
2.4
3.4
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
50
2.5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 900 mA, P
out
= 300 W, f = 450 MHz, CW
G
ps
η
D
IRL
20
58
—
22
60
--16
24
—
--9
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
2
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
