Freescale Semiconductor
Technical Data
Document Number: MRF6VP11KH
Rev. 7, 4/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
•
Typical Pulsed Performance at 130 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100
μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
CW Operation Capability with Adequate Cooling
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Push--Pull Operation
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP11KHR6
1.8-
-150 MHz, 1000 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
PART IS PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle
Case Temperature 67°C, 1000 W CW, 100 MHz
Symbol
Z
θJC
R
θJC
Value
(2,3)
0.03
0.13
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP11KHR6
1
RF Device Data
Freescale Semiconductor
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