TYPICAL CHARACTERISTICS
1000
C
iss
C
oss
100
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
I
D
, DRAIN CURRENT (AMPS)
100
C, CAPACITANCE (pF)
T
J
= 200°C
T
J
= 150°C
T
J
= 175°C
10
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
1
1
T
C
= 25°C
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
100
Note:
Each side of device measured separately.
Figure 4. Capacitance versus Drain-
-Source Voltage
27
26
G
ps
, POWER GAIN (dB)
25
24
23
η
D
22
21
20
10
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
100
P
out
, OUTPUT POWER (WATTS) PULSED
1000
30
20
G
ps
80
70
η
D,
DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (dBm)
60
50
40
65
64
63
62
61
60
59
58
57
56
30
Note:
Each side of device measured separately.
Figure 5. DC Safe Operating Area
P3dB = 61.23 dBm (1327.39 W)
P1dB = 60.57 dBm (1140.24 W)
Ideal
Actual
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
31
32
33
34
35
36
37
38
39
10
2000
P
in
, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
32
I
DQ
= 6000 mA
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
28
3600 mA
1500 mA
750 mA
24
150 mA
20
V
DD
= 50 Vdc, f = 130 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
10
100
P
out
, OUTPUT POWER (WATTS) PULSED
1000
2000
12
0
375 mA
24
28
Figure 7. Pulsed Output Power versus
Input Power
20
V
DD
= 30 V
16
35 V
40 V
45 V
50 V
16
I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
200
400
600
800
1000
1200
1400
1600
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain versus
Output Power
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
5
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
