Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 13.6 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 13.6 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 13.6 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Common--Source Amplifier Power Gain
Drain Efficiency
Frequency
(MHz)
520
Signal
Type
CW
P
out
(W)
47
(3 dB Overdrive)
C
rss
C
oss
C
iss
—
—
—
1.6
49.5
109
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 13.6 Vdc, I
DQ
= 10 mA, P
out
= 31 W, f = 520 MHz
G
ps
η
D
16.5
70.0
17.7
71.4
19.0
—
dB
%
Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system, I
DQ
= 10 mA)
VSWR
>65:1 at all Phase Angles
Test Voltage, V
DD
17
Result
No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
