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MRF6S23100HSR3 参数 Datasheet PDF下载

MRF6S23100HSR3图片预览
型号: MRF6S23100HSR3
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率Dield效应晶体管 [RF Power Dield Effect Transistors]
分类和应用: 晶体晶体管射频放大器
文件页数/大小: 12 页 / 415 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 20 W (Avg.), I
DQ
= 1000 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−12
−15
−18
−21
−24
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−12
−14
−16
−18
−20
−22
IRL, INPUT RETURN LOSS (dB)
1500 mA
−30
−40
−50
750 mA
−60
−70
1
10
100
300
0.1
1
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
1000 mA
I
DQ
= 500 mA
1250 mA
IRL, INPUT RETURN LOSS (dB)
16
15.8
G
ps
, POWER GAIN (dB)
15.6
15.4
15.2
15
14.8
ACPR
14.6
G
ps
η
D
25.4
24.8
24.2
23.6
3.84 MHz Channel Bandwidth
−35
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
−37
IRL
−39
−41
−43
14.4
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 20 Watts Avg.
15.2
15.1
15
G
ps
, POWER GAIN (dB)
14.9
14.8
14.7
14.6
14.5
14.4
14.3
η
D
35.5
V
DD
= 28 Vdc, P
out
= 40 W (Avg.), I
DQ
= 1000 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
35
34.5
34
G
ps
35.5
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
−25
−27
−29
−31
ACPR
IRL
−33
14.2
−35
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 40 Watts Avg.
18
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1500 mA
17
G
ps
, POWER GAIN (dB)
1250 mA
16
15
14
13
12
0.1
500 mA
1000 mA
750 mA
V
DD
= 28 Vdc, f1 = 2345 MHz
f2 = 2355 MHz, Two−Tone Measurements
10 MHz Tone Spacing
0
−10
−20
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
5