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MRFE6VS25NR1 参数 Datasheet PDF下载

MRFE6VS25NR1图片预览
型号: MRFE6VS25NR1
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率LDMOS晶体管 [RF Power LDMOS Transistor]
分类和应用: 晶体晶体管光电二极管局域网
文件页数/大小: 24 页 / 1302 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Symbol
R
θJC
Z
θJC
Value
--0.5, +133
--6.0, +10
--65 to +150
--40 to +150
--40 to +225
Value
(2,3)
1.2
0.29
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 80°C, 25 W CW, 50 Vdc, I
DQ
= 10 mA, 512 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 77°C, 25 W Peak, 100
μsec
Pulse Width,
20% Duty Cycle, 50 Vdc, I
DQ
= 10 mA, 512 MHz
Unit
°C/W
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
B, passes 250 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 85
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 10 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 210 mAdc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
0.26
14.2
39.2
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.0
2.0
2.4
0.28
2.5
3.0
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
133
142
400
2
7
nAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
MRFE6VS25NR1
2
RF Device Data
Freescale Semiconductor, Inc.