TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
5th Order
−50
−60
−70
−80
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
7th Order
V
DD
= 26 Vdc
I
DQ1
= 120 mA, I
DQ2
= 950 mA
f1 = 945 MHz, f2 = 945.1 MHz
100 kHz Tone Spacing
−10
−20
−30
−40
5th Order
−50
−60
−70
−80
0.1
1
10
100
TWO −TONE SPACING (MHz)
7th Order
V
DD
= 26 Vdc, P
out
= 100 W (PEP), I
DQ1
= 150 mA
I
DQ2
= 1 A, Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 945 MHz
3rd Order
3rd Order
Figure 9. Intermodulation Distortion Products
versus Output Power
58
57
P
out
, OUTPUT POWER (dBc)
56
55
54
53
52
51
50
49
48
14
15
16
17
Actual
V
DD
= 26 Vdc, I
DQ1
= 120 mA, I
DQ2
= 950 mA
Pulsed CW, 12
μsec(on),
1% Duty Cycle
f = 945 MHz
18
19
20
21
22
23
24
25
P1dB = 50.9 dBm (123 W)
P6dB = 51.95 dBm (156 W)
P3dB = 51.5 dBm (140 W)
Ideal
36
G
ps
, POWER GAIN (dB)
34
32
G
ps
38
Figure 10. Intermodulation Distortion
Products versus Tone Spacing
60
50
40
30
85_C
30
28
26
1
10
PAE
V
DD
= 26 Vdc
I
DQ1
= 120 mA
I
DQ2
= 950 mA
f = 945 MHz
100
20
10
0
300
PAE, POWER ADDED EFFICIENCY (%)
T
C
= −30_C
−30_C
25_C
85_C
25_C
P
in
, INPUT POWER (dBm)
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Pulsed CW Output Power versus
Input Power
40
38
G
ps
, POWER GAIN (dB)
36
G
ps
34
25_C
32
85_C
30
28
26
1
10
P
out
, OUTPUT POWER (WATTS) CW
100
PAE
20
10
0
300
30
V
DD
= 26 Vdc, I
DQ1
= 120 mA
I
DQ2
= 950 mA, f = 880 MHz
T
C
= −30_C
−30_C
25_C
50
85_C
40
70
60
PAE, POWER ADDED EFFICIENCY (%)
34
33
G
ps
, POWER GAIN (dB)
32
31
Figure 12. Power Gain and Power Added
Efficiency versus Output Power @ 945 MHz
32 V
30
24 V
29
V
DD
= 20 V
28
0
50
100
150
200
P
out
, OUTPUT POWER (WATTS) CW
I
DQ1
= 120 mA
I
DQ2
= 950 mA
f = 945 MHz
Figure 13. Power Gain and Power Added
Efficiency versus Output Power @ 880 MHz
Figure 14. Power Gain versus Output Power
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
