Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 290
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 950 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 26 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Power Gain
Input Return Loss
Power Added Efficiency
P
out
@ 1 dB Compression Point, CW
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
6
0.05
2
2.7
8.6
0.4
3.5
—
12
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ1
= 120 mA, I
DQ2
= 950 mA, f = 960 MHz
G
ps
IRL
PAE
P1dB
31
—
52
100
33.5
- 15
54
112
36
- 10
—
—
dB
dB
%
W
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 50 W Avg., I
DQ1
= 230 mA,
I
DQ2
= 870 mA, 869-894 MHz and 920-960 MHz EDGE Modulation
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
PAE
EVM
SR1
SR2
—
—
—
—
—
35.5
39
2
- 63
- 81
—
—
—
—
—
dB
%
% rms
dBc
dBc
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
