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YG862C08R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
FUJI Diode
Symbols
V
RRM
V
iso
Io
I
FSM
Tj
Tstg
Conditions
-
Terminals-to-case, AC.1min
50Hz Square wave duty =1/2
Tc = 109˚C
Sine wave, 10ms 1shot
-
-
Ratings
80
1500
10*
125
150
-40 to +150
Units
V
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
Rth(j-c)
I
F
=5 A
V
R
=V
RRM
Junction to case
Conditions
Maximum
0.76
150
3.5
Units
V
µA
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
-
Maximum
0.3 to 0.5
1.7
Units
N•m
g
1