MBM29LV650UE/651UE-
90/12
(Continued)
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the
factory.
Internally generated and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically inhibits write operations on the loss of power. The end of program or erase is detected
by Data Polling of DQ
7
, by the Toggle Bit feature on DQ
6
. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
The devices electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words
are programmed one word at a time using the EPROM programming mechanism of hot electron injection.
s
FEATURES
• 0.23
µm
Process Technology
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standards
Uses same software commands with single-power supply Flash
• Address don’t care during the command sequence
• Industry-standard pinouts
48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
90 ns maximum access time
• Flexible sector architecture
One hundred twenty-eight 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
At V
IL
, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
At V
IH
, allows removal of protection
MBM29LV650UE:
has the function to protect the last 32K word sector (SA 127)
MBM29LV651UE:
has the function to protect the first 32K word sector (SA 0)
• ACC input pin
At V
ACC
, increases program performance
• Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded program
TM
* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low V
CC
write inhibit
≤
2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
(Continued)
2
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
