HWL23NPB 参数 Datasheet PDF下载

HWL23NPB

L-Band GaAS Power FET

Autumn 2002 V1

Typical Performance at 25°C

°

Output Power & Efficiency vs Vds

@ f=0.9GHz,Ids=55mA

Po (dBm)

22

20

40

18

16

10

14

1

2

3

4

5

6

0

Vds (V)

30

20

Po

PAE

PAE (%)

60

50

Output Power & Efficiency vs Vds

@ f=1.9GHz,Ids=55mA

Po (dBm)

22

PAE (%)

60

50

20

40

18

30

20

16

10

14

1

2

3

4

5

6

0

Vds (V)

Po

PAE

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

Email:

sales@hw.com.tw

All specifications are subject to change without notice.