HWL23NPB 参数 Datasheet PDF下载

HWL23NPB

L-Band GaAS Power FET

Autumn 2002 V1

Output Power & Efficiency & Gain vs Input Power

@ f=0.9GHz, Vds=3V

Po (dBm)

20

PAE (%)

60

50

15

40

10

Gain

5

10

0

-8

-4

0

4

8

12

0

Pin (dBm)

30

20

Po

Gain

Eff

Output Power & Efficiency & Gain vs Input Power

@ f=1.9GHz, Vds=3V

Po (dBm)

20

PAE (%)

60

50

15

40

10

Gain

5

10

0

-8

-4

0

4

8

12

16

0

Pin (dBm)

30

20

Po

Gain

Eff

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

Email:

sales@hw.com.tw

All specifications are subject to change without notice.