SDT10S60
5 Typ. reverse current vs. reverse voltage
I
R
=
f
(
V
R
)
10
2
6 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
1
SDT10S60
µA
10
1
K/W
10
0
10
0
150°C
125°C
100°C
25°C
Z
thJC
10
-1
I
R
D = 0.50
10
-1
10
-2
0.20
0.10
0.05
0.02
single pulse
0.01
10
-2
10
-3
10
-3
100 150 200 250 300 350 400 450 500
V
600
V
R
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
7 Typ. capacitance vs. reverse voltage
C
=
f
(
V
R
)
8 Typ.
C
stored energy
E
C
=
f
(
V
R
)
6
parameter:
T
C
= 25 °C,
f
= 1 MHz
400
pF
320
280
240
200
160
120
80
40
0
0
10
1
2
3
10
V
V
R
µJ
5
4.5
C
E
C
4
3.5
3
2.5
2
1.5
1
0.5
10
10
0
0
100
200
300
400
V
V
R
600
Rev. 2.0
Page 5
2004-03-18