Preliminary data
SPI35N10
SPP35N10,SPB35N10
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
,
I
D
=26.4A
Symbol
Conditions
min.
Values
typ.
23
1180
245
137
12.2
63
39
23
max.
-
1570
326
206
18.3
95
59
34
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=50V,
V
GS
=10V,
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=80V,
I
D
=35A,
V
GS
=0 to 10V
V
DD
=80V,
I
D
=35A
V
(plateau)
V
DD
=80V,
I
D
=35A
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=35A
V
R
=50V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
I
SM
T
C
=25°C
Page 3
I
D
=35A,
R
G
=7
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
12
-
-
-
-
-
-
-
S
pF
ns
-
-
-
-
6.5
27
49
6.1
8.6
41
65
-
nC
V
-
-
-
-
-
-
-
0.95
80
230
35
140
1.25
100
290
A
V
ns
nC
2002-01-31
INFINEON [ INFINEON TECHNOLOGIES AG ]
