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IN74HC299DW 参数 Datasheet PDF下载

IN74HC299DW图片预览
型号: IN74HC299DW
PDF下载: 下载PDF文件 查看货源
内容描述: 与并行I的8位双向通用移位寄存器/ O [8-BIT BIDIRECTIONAL UNIVERSAL SHIFT REGISTER WITH PARALLEL I/O]
分类和应用: 移位寄存器
文件页数/大小: 8 页 / 195 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
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IN74HC299
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
mA
±20
I
OUT
DC Output Current, per Pin
mA
±35
I
CC
DC Supply Current, V
CC
and GND Pins
mA
±75
P
D
Power Dissipation in Still Air, Plastic DIP+
750
mW
SOIC Package+
500
Tstg
Storage Temperature
-65 to +150
°C
260
T
L
Lead Temperature, 1 mm from Case for 10
°C
Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage (Referenced to GND)
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
T
A
Operating Temperature, All Package Types
t
r
, t
f
Input Rise and Fall Time (Figure 1) V
CC
=2.0
V
V
CC
=4.5
V
V
CC
=6.0 V
Min
2.0
0
-55
0
0
0
Max
6.0
V
CC
+125
1000
500
400
Unit
V
V
°C
ns
This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND≤(V
IN
or V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V
CC
). Unused outputs must be left open. I/O pins must be connected to a properly terminated line
or bus.
2