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IN74HC365 参数 Datasheet PDF下载

IN74HC365图片预览
型号: IN74HC365
PDF下载: 下载PDF文件 查看货源
内容描述: 与普通十六进制3态非反相缓冲器启用(高性能硅栅CMOS ) [HEX 3-STATE NONINVERTING BUFFER WITH COMMON ENABLES (High-Performance Silicon-Gate CMOS)]
分类和应用:
文件页数/大小: 5 页 / 144 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
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IN74HC365
DC ELECTRICAL CHARACTERISTICS(Voltages
Referenced to GND)
Guaranteed Limit
V
CC
Symbol
Parameter
Test Conditions
V
25
°C ≤85 ≤125
to
°C
°C
-55°C
1.5
1.5
1.5
V
IH
Minimum
High- V
OUT
=
V
CC
-0.1
V 2.0
3.15 3.15
3.15
Level
Input
I
OUT
≤
20
µA
4.5
4.2
4.2
4.2
Voltage
6.0
0.3
0.3
0.3
V
IL
Maximum Low - V
OUT
=0.1
V 2.0
0.9
0.9
0.9
Level
Input
I
OUT
 ≤
20
µA
4.5
1.2
1.2
1.2
Voltage
6.0
1.9
1.9
1.9
V
OH
Minimum
High- V
IN
=V
IH
2.0
4.4
4.4
4.4
Level
Output
I
OUT
 ≤
20
µA
4.5
5.9
5.9
5.9
Voltage
6.0
V
IN
=V
IH
3.7
3.84
3.98
I
OUT
6.0
mA 4.5
5.2
5.34
5.48
6.0
I
OUT
 ≤
7.8 mA
0.1
0.1
0.1
V
OL
Maximum
Low- V
IN
=
V
IL
2.0
0.1
0.1
0.1
Level
Output
I
OUT
 ≤
20
µA
4.5
0.1
0.1
0.1
Voltage
6.0
V
IN
=
V
IL
0.4
0.33
0.26
I
OUT
6.0
mA 4.5
0.4
0.33
0.26
6.0
I
OUT
 ≤
7.8 mA
I
IN
Maximum Input V
IN
=V
CC
or GND
6.0
±0.1
±1.0 ±1.0
Leakage Current
in
High- 6.0
I
OZ
Maximum Three- Output
±0.5
±5.0 ±10
State
State
Leakage Impedance
V
IN
=
Current
V
IL
or
V
IH
V
OUT
=V
CC
or GND
V
IN
=V
CC
I
CC
Maximum
or
GND 6.0
8.0
80
160
Quiescent Supply I
OUT
=0µA
Current
(per Package)
Unit
V
V
V
V
µA
µA
µA
3