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IN74HC365 参数 Datasheet PDF下载

IN74HC365图片预览
型号: IN74HC365
PDF下载: 下载PDF文件 查看货源
内容描述: 与普通十六进制3态非反相缓冲器启用(高性能硅栅CMOS ) [HEX 3-STATE NONINVERTING BUFFER WITH COMMON ENABLES (High-Performance Silicon-Gate CMOS)]
分类和应用:
文件页数/大小: 5 页 / 144 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
 浏览型号IN74HC365的Datasheet PDF文件第1页浏览型号IN74HC365的Datasheet PDF文件第2页浏览型号IN74HC365的Datasheet PDF文件第3页浏览型号IN74HC365的Datasheet PDF文件第5页  
IN74HC365  
AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns)  
VCC  
V
Guaranteed Limit  
Symbol  
Parameter  
Unit  
25 °C 85°C 125  
to  
-55°C  
120  
24  
°C  
tPLH  
,
Maximum Propagation Delay, Input A to 2.0  
150  
30  
180  
36  
ns  
ns  
ns  
ns  
tPHL  
Output Y (Figures 1 and 3)  
4.5  
6.0  
20  
26  
31  
tPLZ  
,
Maximum Propagation Delay ,Output 2.0  
220  
44  
275  
55  
330  
66  
tPHZ  
Enable  
to 4.5  
6.0  
Output Y (Figures 2 and 4)  
37  
47  
56  
tPZL  
,
Maximum Propagation Delay ,Output 2.0  
220  
44  
275  
55  
330  
66  
tPZH  
Enable  
to 4.5  
6.0  
Output Y (Figures 2 and 4)  
37  
47  
56  
tTLH, tTHL Maximum Output Transition Time, Any 2.0  
60  
75  
90  
Output  
4.5  
6.0  
-
12  
15  
18  
(Figures 1 and 3)  
Maximum Input Capacitance  
10  
13  
15  
CIN  
COUT  
10  
10  
10  
pF  
pF  
Maximum  
Three-State  
Output  
-
15  
15  
15  
Capacitance (Output in High-Impedance  
State)  
Power Dissipation Capacitance (Per  
Buffer)  
Typical @25°C,VCC=5.0 V  
CPD  
Used to determine the no-load dynamic  
40  
pF  
power  
consumption:  
PD=CPDVCC2f+ICCVCC  
Figure 1. Switching Waveforms  
Figure 2. Switching Waveforms  
4