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IN74HC365 参数 Datasheet PDF下载

IN74HC365图片预览
型号: IN74HC365
PDF下载: 下载PDF文件 查看货源
内容描述: 与普通十六进制3态非反相缓冲器启用(高性能硅栅CMOS ) [HEX 3-STATE NONINVERTING BUFFER WITH COMMON ENABLES (High-Performance Silicon-Gate CMOS)]
分类和应用:
文件页数/大小: 5 页 / 144 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
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IN74HC365
AC ELECTRICAL CHARACTERISTICS(C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Guaranteed Limit
V
CC
Symbol
Parameter
V
25
°C ≤85°C ≤125
to
°C
-55°C
180
150
120
t
PLH
,
Maximum Propagation Delay, Input A to 2.0
36
30
24
t
PHL
Output Y (Figures 1 and 3)
4.5
31
26
20
6.0
330
275
220
t
PLZ
,
Maximum Propagation Delay ,Output 2.0
66
55
44
t
PHZ
Enable
to 4.5
56
47
37
6.0
Output Y (Figures 2 and 4)
330
275
220
t
PZL
,
Maximum Propagation Delay ,Output 2.0
66
55
44
t
PZH
Enable
to 4.5
56
47
37
6.0
Output Y (Figures 2 and 4)
90
75
60
t
TLH
, t
THL
Maximum Output Transition Time, Any 2.0
18
15
12
4.5
Output
15
13
10
6.0
(Figures 1 and 3)
C
IN
Maximum Input Capacitance
-
10
10
10
-
15
15
15
C
OUT
Maximum
Three-State
Output
Capacitance (Output in High-Impedance
State)
Power Dissipation Capacitance (Per
Buffer)
Used to determine the no-load dynamic
power
consumption:
2
P
D
=C
PD
V
CC
f+I
CC
V
CC
Typical @25°C,V
CC
=5.0 V
40
pF
Unit
ns
ns
ns
ns
pF
pF
C
PD
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
4