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RF1S45N06LESM 参数 Datasheet PDF下载

RF1S45N06LESM图片预览
型号: RF1S45N06LESM
PDF下载: 下载PDF文件 查看货源
内容描述: 45A , 60V , 0.028欧姆,逻辑电平N沟道功率MOSFET [45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 429 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFP45N06LE, RF1S45N06LESM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
50
1.0
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
Z
θ
JC
, NORMALIZED
THERMAL IMPEDANCE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
I
DM
, PEAK CURRENT CAPABILITY (A)
T
C
= 25
o
C
T
J
= MAX RATED
500
V
GS
= 10V
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
100
100µs
V
GS
= 5V
100
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
10
10
-5
175 - T
C
150
10
0
10
1
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3