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RFD3055LESM9A 参数 Datasheet PDF下载

RFD3055LESM9A图片预览
型号: RFD3055LESM9A
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| MOSFET | N沟道| 60V V( BR ) DSS | 11A I( D) | TO- 252AA\n [TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA ]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 8 页 / 89 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
100
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
Unless Otherwise Specified
(Continued)
15
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
12
V
GS
= 5V
V
GS
= 4V
9
V
GS
= 3.5V
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
T
C
= 25
o
C
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
4
1
0.001
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
0
NOTE: Refer to Intersil Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
15
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
I
D
= 3A
I
D
= 11A
I
D
= 5A
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
12
I
D,
DRAIN CURRENT (A)
9
6
T
J
= 25
o
C
90
3
T
J
= 175
o
C
0
2
3
T
J
= -55
o
C
60
4
5
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
150
t
r
100
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
GS
= 4.5V, V
DD
= 30V, I
D
= 8A
SWITCHING TIME (ns)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
t
f
50
t
d(OFF)
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
1.0
V
GS
= 10V, I
D
= 11A
0.5
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
6-4