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RFD3055LESM9A 参数 Datasheet PDF下载

RFD3055LESM9A图片预览
型号: RFD3055LESM9A
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| MOSFET | N沟道| 60V V( BR ) DSS | 11A I( D) | TO- 252AA\n [TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA ]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 8 页 / 89 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFD3055LE, RFD3055LESM, RFP3055LE
PSPICE Electrical Model
.SUBCKT RFD3055LE 2 1 3 ;
CA 12 8 3.9e-9
CB 15 14 4.9e-9
CIN 6 8 3.25e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
rev 1/30/95
LDRAIN
DPLCAP
5
RLDRAIN
DBREAK
11
+
17
EBREAK 18
DRAIN
2
RSLC1
51
ESLC
50
RSLC2
5
51
-
ESG
6
8
+
LGATE
GATE
1
RLGATE
CIN
EVTEMP
RGATE +
18
-
22
9
20
EVTHRES
+ 19
-
8
6
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.42e-9
LSOURCE 3 7 2.57e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.7e-2
RGATE 9 20 3.37
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 25.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.50e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
MSTRO
LSOURCE
8
RSOURCE
RLSOURCE
7
SOURCE
3
S1A
12
S1B
CA
13
+
EGS
6
8
13
8
S2A
14
13
S2B
CB
+
EDS
5
8
14
IT
15
17
-
-
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))}
.MODEL DBODYMOD D (IS = 1.75e-13 RS = 1.75e-2 TRS1 = 1e-4 TRS2 = 5e-6 CJO = 5.9e-10 TT = 5.45e-8 N = 1.03 M = 0.6)
.MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6)
.MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81)
.MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37)
.MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.78 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5)
.MODEL RSLCMOD RES (TC1 = 0 TC2 = 0)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
.ENDS
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -4 VOFF= -2.5)
VON = -2.5 VOFF= -4)
VON = -0.5 VOFF= 0)
VON = 0 VOFF= -0.5)
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options;
IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
6-7
+
-
EBREAK 11 7 17 18 67.8
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
RDRAIN
21
16
DBODY
-
MWEAK
MMED
RBREAK
18
RVTEMP
19
-
VBAT
+
8
22
RVTHRES