IRF5210PbF
1000
100
10
1000
100
10
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
-4.5V
-4.5V
40µs PULSE WIDTH
40µs PULSE WIDTH
T
C
= 175°C
T
c
= 25°C
A
100
1
1
0.1
A
100
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= -35A
D
100
10
1
TJ = 25°C
TJ = 175°C
VDS = -50V
40µs PULSE WIDTH
V
= -10V
GS
A
10A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
INFINEON [ Infineon ]
