IRF7416PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
-
-
+
R
G
V
GS
*
**
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
+
-
V
DD
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
V
GS
=10V
] ***
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
[
V
DD
]
Re-Applied
Voltage
Inductor Curent
Body Diode
Forward Drop
Ripple
≤
5%
[
I
SD
]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 13.
For P-Channel HEXFETS
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