T..RIA Series
Bulletin I27105 rev. B 02/02
1200
P eak Half S ine Wave On-s tate Current (A)
1100
1000
900
800
700
600
500
1
10
100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
P eak Half S ine Wave On-s tate Current (A)
At Any R ated L oad Condition And W ith
R ated V
R R M
Applied F ollowing S urge.
Initial T
J
= 125 C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
1300
1200
1100
1000
900
800
700
600
Maximum Non R epetitive S urge Current
Vers us P uls e T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T
J
= 125 C
No Voltage R eapplied
R ated V
R R M
eapplied
R
T 50R I A.. S eries
T 50R IA.. S eries
500
0.01
0.1
P uls e T rain Duration (s )
1
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
Ins tantaneous On-s tate Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T
J
= 25 C
10
T
J
= 125 C
T 50R IA.. S eries
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100
Ins tantaneous Gate Voltage (V)
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 30ohms ;
tr=0.5 s , tp>=6 s
b) R ecommended load line for
<=30% rated di/dt : 20V, 65ohms
10
tr=1 s , tp>=6 s
(b)
T j=-40 C
T j=25 C
(1) P GM = 10W, tp = 5 ms
(2) P GM = 20W, tp = 2 ms
(3) P GM = 50W, tp = 1 ms
(4) P GM = 100W, tp = 500 s
(a)
T j=125 C
1
(1) (2)
(3) (4)
VGD
IGD
0.1
0.00 1
0.0 1
0.1
T 50 R IA.. S eries
1
F requency L imited by P G(AV)
10
100
1000
Ins tantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
6
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