T..RIA Series
Bulletin I27105 rev. B 02/02
1500
P eak H alf S ine Wave On-s tate Current (A)
1400
1300
1200
1100
1000
900
800
700
1
10
100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
P eak H alf S ine Wave On-s tate Current (A)
At Any R ated L oad Condition And W ith
R ated V
R R M
Applied F ollowing S urge.
Initial T
J
= 125 C
@ 6 0 H z 0.0083 s
@ 5 0 H z 0.0100 s
170 0
160 0
150 0
140 0
130 0
120 0
110 0
100 0
900
800
700
Maximum Non R epetitive S urge Current
Vers us P uls e T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T
J
= 125 C
No Voltage R eapplied
R ated V
R R M
R eapplied
T 70R IA.. S eries
T 70R IA.. S eries
600
0.01
0.1
P uls e T rain Duration (s )
1
Fig. 16 - Maximum Non-Repetitive Surge Current
1000
Ins tantaneous On-s tate Current (A)
Fig. 17 - Maximum Non-Repetitive Surge Current
100
T
J
= 25 C
10
T
J
= 125 C
T 70R IA.. S eries
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100
Ins tantaneous Gate Voltage (V)
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 20ohms ;
tr=0.5 s , tp>=6 s
b) R ecommended load line for
<=30 % rated di/dt : 15V, 40ohms
10
tr=1 s , tp>=6 s
(b)
T j=-40 C
T j=2 5 C
(1) P GM = 12W, tp = 5ms
(2) P GM = 30W, tp = 2ms
(3) P GM = 60W, tp = 1ms
(4) P GM = 200W, tp = 300 s
(a)
T j=125 C
1
(1)
(2) (3)
(4)
VGD
0.1
0.0 01
IGD
0.01
T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV)
0.1
1
10
100
1000
Ins tantaneous Gate Current (A)
Fig. 19 - Gate Characteristics
8
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