Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6037
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6038
2N6039
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CEO
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
I
C
=2A; I
B
=8mA
I
C
=4A; I
B
=40mA
I
C
=4A; I
B
=40mA
I
C
=2A ; V
CE
=3V
I
C
=0.1A ;I
B
=0
2N6037 2N6038 2N6039
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
2.0
3.0
4.0
2.8
0.1
V
V
V
V
mA
mA
mA
mA
固电
IN
Collector cut-off current
Collector cut-off current
导�½�
半
V
CE
=Rated V
CEO
; I
B
=0
V
CE
=Rated V
CEO
; V
BE(off)
=1.5V
T
C
=125℃
V
CB
=Rated V
CBO
; I
E
=0
V
EB
=5V; I
C
=0
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
SEM
NG
HA
C
ND
ICO
TOR
UC
0.1
0.5
0.1
2.0
I
C
=0.5A ; V
CE
=3V
I
C
=2A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
500
750
100
100
pF
15000
I
E
=0;V
CB
=10V;f=0.1MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
