Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6383
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6384
2N6385
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N6383
I
CEO
Collector cut-off current
2N6384
2N6385
2N6383
I
CEX
Collector cut-off current
2N6384
2N6385
I
EBO
h
FE-1
h
FE-2
C
OB
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
I
C
=5A; I
B
=10mA
I
C
=10A ;I
B
=100mA
I
C
=5A ; V
CE
=3V
I
C
=10A ; V
CE
=3V
V
CE
=40V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=80V; I
B
=0
V
CE
=40V; V
BE
=-1.5V
T
C
=125℃
V
CE
=60V; V
BE
=-1.5V
T
C
=125℃
V
CE
=80V; V
BE
=-1.5V
T
C
=125℃
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=3V
I
C
=10A ; V
CE
=3V
I
E
=0; V
CB
=10V;f=1MHz
1000
100
200
pF
0.3
3.0
0.3
3.0
0.3
3.0
10
20000
mA
mA
1.0
mA
I
C
=0.2A ;I
B
=0
CONDITIONS
MIN
40
60
80
2.0
3.0
2.8
4.5
V
V
V
V
V
TYP.
MAX
UNIT
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
