Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1184
DESCRIPTION
·With
TO-126 package
·High
breakdown voltage
APPLICATIONS
·Audio
frequency power amplifier
·High
frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-5
-1
-0.1
1.5
UNIT
V
V
V
A
A
P
D
Total power dissipation
T
C
=25℃
15
150
-55�½�+150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃