INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
V
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
Collector Capacitance
CONDITIONS
I
C
= 10mA; I
B
= 0
I
C
= 0.5 A ;I
B
= 50mA
I
C
= 1A ;I
B
= 0.1A
I
C
= 2A ;I
B
= 0.2A
I
C
= 0.5A
;
V
CE
= 1V
V
CB
= 100V
;
I
E
= 0
V
CB
= 100V
;
I
E
= 0;T
C
= 125℃
V
EB
= 7V; I
C
= 0
I
C
= 0.2 A ; V
CE
= 1V
I
C
= 1A ; V
CE
= 1V
I
C
= 0.1 A; V
CE
= 10V; f
test
= 10MHz
I
E
= 0; V
CB
= 10V; f
test
= 0.1MHz
40
15
40
MIN
100
MJE243
MAX
UNIT
V
0.3
0.6
1.8
1.5
0.1
0.1
0.1
180
V
V
V
V
μA
mA
μA
MHz
50
pF
isc Website:www.iscsemi.cn